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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11824065 B1

PDFFull Text
Date of Patent:
Nov. 21, 2023

Filed:

Sep. 07, 2021

Display panel and method for manufacturing the same

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Yoon-Jong Cho, Yongin-si, KR;

Seokje Seong, Seongnam-si, KR;

Seongjun Lee, Seoul, KR;

Yoonjee Shin, Ulsan, KR;

Suyeon Yun, Seoul, KR;

Wooho Jeong, Anyang-si, KR;

Joonhoo Choi, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 27/12 (2006.01); G09G 3/3266 (2016.01); G09G 3/3275 (2016.01); H10K 50/11 (2023.01); H10K 50/844 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); H01L 27/1225 (2013.01); H10K 50/11 (2023.02); H10K 50/844 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H10K 2102/311 (2023.02);
Abstract

A display panel includes a base layer including a first area and a second area. At least one inorganic layer disposed on the base layer overlaps the first area and the second area. The at least one inorganic layer comprises a lower opening. A first thin-film transistor is disposed on the at least one inorganic layer. The first thin-film transistor includes a silicon semiconductor pattern. A second thin-film transistor is disposed on the at least one inorganic layer. The second thin-film transistor includes an oxide semiconductor pattern. A plurality of insulation layers overlap the first area and the second area. An upper opening extends from the lower opening. A signal line is electrically connected to the second thin-film transistor. An organic layer is disposed in the lower opening and the upper opening. A light emitting element is disposed on the organic layer.

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