The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Jan. 21, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Akito Nishii, Tokyo, JP;
Tatsuo Harada, Tokyo, JP;
Katsumi Uryu, Tokyo, JP;
Noritsugu Nomura, Tokyo, JP;
Sho Tanaka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
According to one aspect, a semiconductor device includes: a buffer layer disposed on a front surface of a second semiconductor layer, and having at least one opening in plan view; and an electrode disposed over the second semiconductor layer and the buffer layer, and being in contact with the second semiconductor layer through the at least one opening, wherein the buffer layer has a higher Vickers hardness than the electrode, and a width w of each of the at least one opening satisfies w<W, where s is a thickness of the buffer layer, t is a thickness of the electrode, and W=2×(s×t−s)holds true.