The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Sep. 15, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brent Anderson, Jericho, VT (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Christopher J. Penny, Saratoga Springs, NY (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Kisik Choi, Watervliet, NY (US);

Robert Robison, Rexford, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76802 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01);
Abstract

Embodiments of the present invention are directed to fabrication methods and resulting interconnect structures having a conductive thin metal layer on a top via that promotes the selective growth of the next level interconnect lines (the line above). In a non-limiting embodiment of the invention, a first conductive line is formed in a dielectric layer. A via is formed on the first conductive line and a seed layer is formed on the via and the dielectric layer. A surface of the seed layer is exposed and a second conductive line is deposited onto the exposed surface of the seed layer. In a non-limiting embodiment of the invention, the second conductive line is selectively grown from the seed layer.


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