The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Jun. 04, 2021
Applicant:

The Johns Hopkins University, Baltimore, MD (US);

Inventors:

Jarod C. Gagnon, Finksburg, MD (US);

Michael J. Presley, Silver Spring, MD (US);

Steven M. Storck, Catonsville, MD (US);

Jeffrey P. Maranchi, Clarksburg, MD (US);

Korine A. Ohiri, Laurel, MD (US);

Scott A. Shuler, Baltimore, MD (US);

Assignee:

The Johns Hopkins University, Baltimore, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02554 (2013.01); C30B 29/406 (2013.01); H01L 21/0262 (2013.01);
Abstract

A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers and/or a maximum width of 25 micrometers to 10 millimeters and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material. The depositing the molten metal includes depositing a metal composition including the molten metal and an etchant or depositing the etchant separate from the molten metal in the enclosed chamber.


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