The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Apr. 15, 2021
Applicant:

Coolcad Electronics, Llc, College Park, MD (US);

Inventors:

Neil Goldsman, Takoma Park, MD (US);

Akin Akturk, Gaithersburg, MD (US);

Zeynep Dilli, Rockville, MD (US);

Mitchell Adrian Gross, Baltimore, MD (US);

Aysanew Abate, Washington, DC (US);

Assignee:

CoolCAD Electronics, LLC, College Park, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/02612 (2013.01); H01L 21/28158 (2013.01);
Abstract

A high-temperature silicon carbide device, along with an integrated circuit including the device and method of fabricating the device are described. For example, the method includes forming one of a source region and a drain region of a silicon carbide metal-oxide-semiconductor device. The method may include forming a gate structure adjacent to either one of the source region and the drain region. The gate structure may include an insulating layer. The method may further include forming the insulating layer with a first growth step performed in a pure oxygen environment and with a second growth step performed in a nitrous oxide environment.


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