logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11823838 B1

PDFFull Text
Date of Patent:
Nov. 21, 2023

Filed:

Feb. 28, 2018

Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Doh Won Jung, Seoul, KR;

Jong Wook Roh, Anyang-si, KR;

Daejin Yang, Yeongju-si, KR;

Chan Kwak, Yongin-si, KR;

Hyungjun Kim, Suwon-si, KR;

Woojin Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

CANTOR COLBURN LLP

Primary Examiner:

C Melissa Koslow

Int. Cl.
CPC ...
H01G 4/12 (2006.01); H01G 4/30 (2006.01); C01G 33/00 (2006.01); C04B 35/495 (2006.01); H01G 4/33 (2006.01); C04B 35/468 (2006.01); H01G 4/232 (2006.01); H01G 4/242 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1281 (2013.01); C01G 33/006 (2013.01); C04B 35/4682 (2013.01); C04B 35/495 (2013.01); H01G 4/1218 (2013.01); H01G 4/1227 (2013.01); H01G 4/1236 (2013.01); H01G 4/30 (2013.01); H01G 4/33 (2013.01); C01P 2002/34 (2013.01); C01P 2002/50 (2013.01); C01P 2002/72 (2013.01); C01P 2002/78 (2013.01); C01P 2004/03 (2013.01); C01P 2004/24 (2013.01); C01P 2006/40 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3213 (2013.01); C04B 2235/3215 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3255 (2013.01); C04B 2235/5292 (2013.01); C04B 2235/768 (2013.01); C04B 2235/80 (2013.01); C04B 2235/85 (2013.01); H01G 4/232 (2013.01); H01G 4/242 (2013.01);
Abstract

A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Find Patent Forward Citations

Loading…