The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Feb. 04, 2021
Applicant:

Oxford University Innovation Limited, Oxford, GB;

Inventors:

Henry James Snaith, Oxford, GB;

Amir Abbas Hagighirad, Oxford, GB;

Feliciano Giustino, Oxford, GB;

Marina Filip, Oxford, GB;

George Volonakis, Oxford, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 29/00 (2006.01); C01G 30/00 (2006.01); H10K 30/30 (2023.01); H10K 71/15 (2023.01); H10K 71/40 (2023.01); H10K 85/00 (2023.01); H10K 85/30 (2023.01); H01G 9/00 (2006.01); H01G 9/20 (2006.01); H10K 30/15 (2023.01);
U.S. Cl.
CPC ...
C01G 29/006 (2013.01); C01G 30/006 (2013.01); H01G 9/0036 (2013.01); H01G 9/2009 (2013.01); H01G 9/2018 (2013.01); H10K 30/30 (2023.02); H10K 71/15 (2023.02); H10K 71/441 (2023.02); H10K 85/00 (2023.02); H10K 85/361 (2023.02); H10K 85/371 (2023.02); C01P 2002/34 (2013.01); C01P 2002/72 (2013.01); C01P 2002/76 (2013.01); C01P 2002/77 (2013.01); C01P 2002/84 (2013.01); H10K 30/151 (2023.02); Y02E 10/549 (2013.01);
Abstract

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B]; (iii) one or more trications [B]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B] selected from Cu, Agand Au; (iii) one or more trications [B]; and (iv) one or more halide anions [X].


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