The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Feb. 25, 2022
Kioxia Corporation, Tokyo, JP;
Shuichi Tsubata, Tokyo, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A method of manufacturing a magnetoresistive memory device, including forming first and second conductors, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer, in order, in a direction away from a substrate. Irradiating, with a first ion beam, the first ferromagnetic layer, the insulating layer, and the second ferromagnetic layer, wherein a third conductor is deposited on a side surface of the second ferromagnetic layer during the irradiation of the first ion beam. Irradiating, with a second ion beam, the second conductor, wherein a first insulator is deposited on a side surface of the insulating layer during the irradiation of the second ion beam; and irradiating, with a third ion beam, the first conductor, wherein a fourth conductor is deposited on a side surface of the second conductor during the irradiation of the third ion beam.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile