The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Jan. 21, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Won Tae Koo, Icheon-si, KR;
Jae Gil Lee, Icheon-si, KR;
Assignee:
SK HYNIX INC., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H10B 51/20 (2023.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H01L 29/6684 (2013.01); H01L 29/66833 (2013.01); H01L 29/78391 (2014.09); H01L 29/792 (2013.01);
Abstract
A semiconductor device includes a substrate, a ferroelectric layer disposed on the substrate in a vertical direction, a charge trap layer disposed on the ferroelectric layer, a gate insulation layer disposed on the charge trap layer, and a gate electrode layer disposed on the gate insulation layer. The charge trap layer includes a metal-organic framework layer and metal particles embedded in the metal-organic framework layer.
Quick Actions:
Koo, Won. (2023). Semiconductor device including ferroelectric layer and metal particles embedded in metal-organic framework layer (U.S. Patent No. 11818895). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11818895
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile