The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Jun. 17, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Dong Uk Lee, Icheon-si, KR;
Hae Chang Yang, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02);
Abstract
A semiconductor device includes: a stack structure including gate patterns and insulating patterns; a channel layer penetrating the stack structure; a memory layer penetrating the stack structure, the memory layer surrounding the channel layer; and a select transistor connected to the channel layer. The select transistor includes: a carbon layer Schottky-joined with the channel layer; a select gate spaced apart from the carbon layer; and a gate insulating layer between the select gate and the carbon layer.