The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Mar. 31, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyoungmin Kim, Namyangju-si, KR;
Donggeon Kim, Suwon-si, KR;
Myeongsik Ryu, Anyang-si, KR;
Sangwook Park, Hwaseong-si, KR;
Inseok Baek, Suwon-si, KR;
Bokyeon Won, Namyangju-si, KR;
Abstract
A sub word-line driver circuit of a semiconductor memory device includes a first active pattern and a second active pattern in a substrate, and a gate pattern. The first active pattern includes a first drain region and a first source region of a first keeping transistor that precharges a first word-line which is inactive and extends in a first direction with a negative voltage. The second active pattern includes a second drain region and a second source region of a second keeping transistor that precharges a second word-line which is inactive and extends in the first direction with the negative voltage. The gate pattern is on a portion of the first active pattern and on a portion of the second active pattern, partially overlaps the first active pattern and the second active pattern.