The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Feb. 12, 2021
Applicant:

Postech Research and Business Development Foundation, Pohang-si, KR;

Inventors:

Seokhyeong Kang, Pohang-si, KR;

Sunghye Park, Daegu, KR;

SungYun Lee, Busan, KR;

Sunmean Kim, Pohang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H10K 10/46 (2023.01); G06F 119/06 (2020.01);
U.S. Cl.
CPC ...
H03K 19/0013 (2013.01); H10K 10/462 (2023.02); G06F 2119/06 (2020.01);
Abstract

A static ternary gate is disclosed. The static ternary gate includes a drain-ground path configured to output a drain voltage through a first transistor when a first pull-up circuit is turned on, and output a ground voltage through a second transistor when a first pull-down circuit is turned on, a half-drain path configured to output a half-drain voltage through the first transistor and the second transistor when both a second pull-up circuit and a second pull-down circuit are turned on. The first transistor is configured to connect a node between the first pull-up circuit and the second pull-down circuit to an output terminal, and the second transistor is configured to connect a node between the second pull-up circuit and the first pull-down circuit to the output terminal.


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