The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Nov. 04, 2022
Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;

Inventors:

Yung-Ling Lan, Wuhu, CN;

Chan-Chan Ling, Wuhu, CN;

Chi-Ming Tsai, Wuhu, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/04 (2013.01);
Abstract

A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.


Find Patent Forward Citations

Loading…