The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Sep. 09, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;
Soichiro Shibasaki, Nerima, JP;
Yuya Honishi, Saitama, JP;
Mutsuki Yamazaki, Yokohama, JP;
Naoyuki Nakagawa, Setagaya, JP;
Sara Yoshio, Yokohama, JP;
Yoshiko Hiraoka, Kawasaki, JP;
Kazushige Yamamoto, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki, JP;
Abstract
A method for manufacturing a stacked thin film, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24×d [Pa] or more and 2.4×d [Pa] or less when a deposition rate is d [μm/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300° C. or more and 600° C. or less, in formation of the photoelectric conversion layer.