The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Jul. 03, 2020
Applicant:

Meyer Burger (Germany) Gmbh, Hohenstein-Ernstthal, DE;

Inventors:

Benjamin Strahm, Giez, CH;

Damien Lachenal, Cortaillod, CH;

Derk Bätzner, Ins, CH;

Assignee:

MEYER BURGER (GERMANY) GMBH, Hohenstein-Ernstthal, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/077 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/077 (2013.01); H01L 31/202 (2013.01);
Abstract

Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer, and include each an amorphous layer portion situated between the predetermined areas and the at least partially nano-crystalline layer portions. The amorphous layer portions have a larger width than the width of the nano-crystalline layer portions. On top if the first patterned silicon layer, a second nano-crystalline silicon layer is deposited that has a doping of a second type being the other of the p-type doping or the n-type doping with respect to the doping-type of the first patterned silicon layer.


Find Patent Forward Citations

Loading…