Photodetector designing method for photodetector having photoelectric conversion layer mostly composed of amorphous selenium and layer thickness designing method thereof, photodetector using the photoelectric conversion layer and photodetector manufacturing method thereof, and storage medium

Abstract

A photodetector designing method includes, according to various requirements required by an application equipped with a photodetector including a photoelectric conversion layer having a superlattice structure mostly composed of amorphous selenium, a step of determining a form of the photodetector; a step of determining a type of a substrate suitable for a wavelength to be detected by the photoelectric conversion layer among the requirements, a step of calculating a multiplication factor M representing an amplification gain generated in a process of tunneling in the superlattice structure, and a step of determining, as a layer thickness of the photoelectric conversion layer, a thickness obtained by multiplying a thickness per one layer of the superlattice structure by the number of layers Nof the superlattice structure on the assumption that the multiplication factor M is approximate to the number of layers N.