Positive electrode of crystalline silicon solar cell having gate rupture prevention function

Abstract

Disclosed is a positive electrode of a crystalline silicon solar cell with a break-proof grid function, comprising a positive electrode busbar (), a positive electrode grid (), and a break-proof grid structure (). The break-proof grid structure () and the positive electrode grid () are integrally printed and formed. The break-proof grid structure () is an octagon with a hollow-out groove () provided on its rear side. The break-proof grid structure () includes a rectangular grid segment () located in the middle, and two isosceles trapezoidal grid segments () that are located at both sides of the rectangular grid segment () and are provided symmetrically with the rectangular grid segment () as a center. The rectangular grid segment () spans the positive electrode busbar (), and the left and right ends of the rectangular grid segment () extend out of the positive electrode busbar (). The extended grid segment is a rectangular extensional break-proof grid segment (). Both ends of the isosceles trapezoidal grid segment () respectively are in contact with the extensional break-proof grid segment () and the positive electrode grid (). The hollow-out groove () is located within the isosceles trapezoidal grid segment () or spans the extensional break-proof grid segment () and the isosceles trapezoidal grid segment (). A break-proof grid design in the positive electrode employs the combination of the octagon and the hollow-out groove, and can effectively reduce the probability of grid breakage when the front-side electrode is printed.