The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Apr. 15, 2022
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Chung-Yi Chen, Hsinchu, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A power semiconductor device includes a first electrode, a substrate, a first epitaxy layer, a second epitaxy layer, a gate electrode, and a second electrode. The substrate is located on the first electrode, and the substrate includes an active region and a termination region surrounding the active region. The first epitaxy layer is located on the substrate, and the first epitaxy layer has a first conductive type. The first epitaxy layer includes a first doped area and a second doped area. The first doped area has the first conductive type and is located in the termination region and the active region. The second doped area has a second conductive type and is located in the termination region. The second epitaxy layer is located on the first epitaxy layer. The gate electrode and the second electrode are located on the second epitaxy layer and are in the active region.