The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Jun. 17, 2020
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Hideaki Togashi, Kanagawa, JP;
Tetsuji Yamaguchi, Kanagawa, JP;
Nobuhiro Kawai, Kanagawa, JP;
Koji Sekiguchi, Kanagawa, JP;
Masahiro Joei, Kanagawa, JP;
Kenichi Murata, Kanagawa, JP;
Shintarou Hirata, Kanagawa, JP;
Yuta Hasegawa, Kanagawa, JP;
Yoshito Nagashima, Kumamoto, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.