The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Aug. 13, 2020
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Junji Iwata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/144 (2006.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/107 (2006.01); G01S 17/08 (2006.01); G01J 1/44 (2006.01); G01S 17/931 (2020.01);
U.S. Cl.
CPC ...
H01L 27/1446 (2013.01); G01J 1/44 (2013.01); G01S 17/08 (2013.01); G01S 17/931 (2020.01); H01L 31/02027 (2013.01); H01L 31/022408 (2013.01); H01L 31/107 (2013.01); G01J 2001/442 (2013.01); G01J 2001/4466 (2013.01);
Abstract

A photoelectric conversion apparatus includes a semiconductor substrate, a plurality of avalanche diodes formed within the semiconductor substrate, the plurality of avalanche diodes including a first avalanche diode and a second avalanche diode, and a trench structure formed between the first avalanche diode and the second avalanche diode in a plan view. Each of the avalanche diodes includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. A contact plug for supplying a potential to the second semiconductor region of the first avalanche diode is formed, and the contact plug is provided at a position where the contact plug overlaps with the trench structure in a plan view.


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