The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Mar. 26, 2021
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd, Beijing, CN;

Inventors:

Wenjie Xu, Beijing, CN;

Jing Wang, Beijing, CN;

Xiaodong Xie, Beijing, CN;

Tsungchieh Kuo, Beijing, CN;

Weiwei Chu, Beijing, CN;

Yuan Li, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 25/16 (2023.01); H01L 27/15 (2006.01); H01L 25/00 (2006.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 25/50 (2013.01); H01L 27/153 (2013.01);
Abstract

Provided are a driving backplane and a method for manufacturing the same, a display device. The method includes: forming a first conductive pattern including signal lines; forming an insulating layer having via holes; forming a second conductive pattern including pairs of coupling electrodes; sequentially forming an inorganic material layer and an organic material layer; performing step exposure and developing on the organic material layer to form an intermediate pattern including a hollow-out portion, a completely-reserved portion and a half-reserved portion; the completely-reserved portion is thicker than the half-reserved portion, a thickness of the half-reserved portion is x times that of the inorganic material layer; etching the inorganic material layer and the intermediate pattern until a part of the inorganic material layer, corresponding to the hollow-out portion, is removed; an etching selection ratio of the inorganic material layer to the intermediate pattern is 1:y, 0<x≤y.


Find Patent Forward Citations

Loading…