The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Mar. 04, 2022
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01G 11/14 (2013.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/00 (2006.01); H01G 11/08 (2013.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01G 11/14 (2013.01); H01L 27/1207 (2013.01); H01L 27/1211 (2013.01); H01L 27/1225 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01G 11/08 (2013.01); H01L 21/8258 (2013.01); H01L 27/0688 (2013.01); Y02E 60/13 (2013.01);
Abstract
A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.