The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Aug. 06, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sungjun Song, Hwaseong-si, KR;
Hyunkwang Jeong, Hwaseong-si, KR;
Changsu Kim, Hwaseong-si, KR;
Chanhee Jeon, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A semiconductor device includes a substrate including a P-well region, a gate electrode on the substrate, and a first region and a second region formed in the substrate on opposite sides adjacent to the gate electrode, the first region includes a first N-well region in the substrate and a second N-well region, a first impurity region, a second impurity region in the first N-well region, the second region includes a third impurity region in the substrate and a fourth impurity region in the third impurity region, a doping concentration of the second N-well region is greater than a doping concentration of the first N-well region, and a doping concentration of the second impurity region is greater than a doping concentration of the second N-well region.