The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Oct. 07, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sumin Ahn, Suwon-si, KR;
Byungjun Kang, Suwon-si, KR;
Jiyoung Kim, Seoul, KR;
Hae Seok Park, Yongin-si, KR;
Chulsoon Chang, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises a dielectric layer, a trench formed in the dielectric layer, a metal pattern that conformally covers a top surface of the dielectric layer, an inner side surface of the trench, and a bottom surface of the trench, a first protection layer that conformally covers the metal pattern, and a second protection layer that covers the first protection layer. A cavity is formed in the trench. The cavity is surrounded by the first protection layer. The first protection layer has an opening that penetrates the first protection layer and extends from a top surface of the first protection layer. The opening is connected to the cavity. A portion of the second protection layer extends into the opening and closes the cavity.