The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Aug. 05, 2022
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Hirotaka Otake, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49562 (2013.01); H01L 23/3107 (2013.01); H01L 29/778 (2013.01);
Abstract
A semiconductor device includes: a first transistor provided with an electron transit layer made of a nitride semiconductor, a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor that includes a second gate electrode, a second source electrode, and a second drain electrode. The first gate electrode and the second drain electrode are electrically connected to each other, while the first source electrode and the second source electrode are not electrically connected to each other.