The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Jan. 14, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
In Ku Kang, Icheon-si, KR;
Sung Hyun Yoon, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/764 (2006.01); H01L 29/10 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/76831 (2013.01); H01L 29/1037 (2013.01); H10B 43/27 (2023.02);
Abstract
A semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. Air gaps are defined between the conductive patterns. The slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. A smallest width of the second interposition part is smaller than a smallest width of the first interposition part.