The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Oct. 08, 2021
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Katsuyoshi Harada, Toyama, JP;

Yoshitomo Hashimoto, Toyama, JP;

Tatsuru Matsuoka, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/0223 (2013.01); H01L 21/02208 (2013.01); H01L 21/02326 (2013.01);
Abstract

There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiClis not gas-phase decomposed, the cycle including non-simultaneously performing: (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate; (b) forming a SiN layer having SiCl termination formed on its surface by supplying the SiClas a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl; and (c) reacting the SiN layer having the SiCl termination with a second reactant containing O by supplying the second reactant to the substrate.


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