The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Jan. 11, 2021
Applicant:

Research Foundation for the State University of New York, Albany, NY (US);

Inventor:

Gregory Denbeaux, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01J 37/317 (2006.01); H01L 21/027 (2006.01); H01L 21/426 (2006.01); G03F 7/09 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); G03F 7/09 (2013.01); H01L 21/0274 (2013.01); H01L 21/426 (2013.01);
Abstract

Photoresist layers of semiconductor components including electric fields. The photoresist layer may include a body including a first portion disposed directly over a conductive layer of the semiconductor component. The body may also include a second portion integrally formed with and positioned over the first portion. The second portion may include a surface formed opposite the first portion. Additionally, the second portion may include a plurality of charged-particles implanted therein, where the plurality of charged-particles generating an electric field may extend through the first portion and the second portion of the body.


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