The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Apr. 21, 2020
Applicant:

Rheinisch-westfälische Technische Hochschule (Rwth) Aachen, Aachen, DE;

Inventors:

Shuai Wei, Aachen, DE;

Matthias Wuttig, Aachen, DE;

Yudong Cheng, Aachen, DE;

Julian Pries, Aachen, DE;

Xiaoling Lu, Aachen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 13/04 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); G11C 13/048 (2013.01); G11C 2013/0095 (2013.01);
Abstract

A phase-change memory () for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory (). A method for non-volatile storage of binary contents in a phase-change memory (), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory ().


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