The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Mar. 29, 2022
Applicant:

Silicon Motion, Inc., Hsinchu County, TW;

Inventors:

Kaihong Wang, Colorado Springs, CO (US);

Cheng Yi, Vancouver, CA;

Assignee:

Silicon Motion, Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/064 (2013.01); G06F 3/0604 (2013.01); G06F 3/0613 (2013.01); G06F 3/0631 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01);
Abstract

A method for performing data access performance shaping of a memory device and associated apparatus are provided. The method may include: receiving a plurality of host commands from a host device, for performing data access on the NV memory according to the plurality of host commands; and monitoring the plurality of host commands to control respective performance metrics of a plurality of access control groups of the memory device with a dual-state leaky bucket (LB) model, wherein regarding any access control group, for example: determining at least one first performance metric according to at least one first command to be a first LB fill level of a dual-state LB; in response to the first LB fill level being below a state threshold, determining the dual-state LB to be in a first predetermined state, and configuring the dual-state LB to have a first predetermined drain rate, for dynamically adjusting performance quota.


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