The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Jul. 06, 2020
University of Electronic Science and Technology of China, Chengdu, CN;
Shirong Bu, Chengdu, CN;
Liu Chen, Chengdu, CN;
Cheng Zeng, Chengdu, CN;
Junsong Ning, Chengdu, CN;
Zhanping Wang, Chengdu, CN;
Yang Fu, Chengdu, CN;
Ruyi Wang, Chengdu, CN;
Chenle Wang, Chengdu, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu, CN;
Abstract
A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile