The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Dec. 15, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Michael Rizzolo, Delmar, NY (US);
Theodorus E. Standaert, Clifton Park, NY (US);
Ashim Dutta, Clifton Park, NY (US);
Dominik Metzler, Clifton Park, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10B 63/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 70/026 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02);
Abstract
A method for fabricating a semiconductor device includes forming a conductive shell layer along a memory stack and a patterned hardmask disposed on the memory stack, and etching the patterned hardmask, the conductive shell layer and the memory stack to form a structure including a central core surrounded by a conductive outer shell disposed on a patterned memory stack.