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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11812627 B1

PDFFull Text
Date of Patent:
Nov. 07, 2023

Filed:

Oct. 27, 2021

Quantum dot device and electronic device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hongkyu Seo, Anyang-si, KR;

Eun Joo Jang, Suwon-si, KR;

Moon Gyu Han, Suwon-si, KR;

Tae Ho Kim, Seongnam-si, KR;

Dae Young Chung, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;

Attorney:

CANTOR COLBURN LLP

Primary Examiner:

Gregory D Clark

Int. Cl.
CPC ...
H10K 50/115 (2023.01); C09K 11/88 (2006.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/18 (2023.01); H10K 50/17 (2023.01); H10K 71/00 (2023.01); B82Y 20/00 (2011.01); H10K 101/40 (2023.01); H10K 101/30 (2023.01);
U.S. Cl.
CPC ...
H10K 50/115 (2023.02); C09K 11/883 (2013.01); H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/167 (2023.02); H10K 50/171 (2023.02); H10K 50/18 (2023.02); H10K 71/00 (2023.02); B82Y 20/00 (2013.01); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02);
Abstract

A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

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