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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11812598 B1

PDFFull Text
Date of Patent:
Nov. 07, 2023

Filed:

Jun. 23, 2021

Memory device including laterally perforated support pillar structures surrounding contact via structures and methods for forming the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventor:

Kazuto Watanabe, Nagoya, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

THE MARBURY LAW GROUP PLLC

Primary Examiner:

Sue A Purvis

Assistant Examiner:

Carnell Hunter, III

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 23/522 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H01L 23/5226 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory stack structures vertically extending through the alternating stack, a retro-stepped dielectric material portion overlying stepped surfaces of the alternating stack, a laterally perforated support pillar structure vertically extending through the alternating stack and the retro-stepped dielectric material portion, and a layer contact via structure laterally surrounded by the laterally perforated support pillar structure and contacting a top surface of a topmost electrically conductive layer within an area of the laterally perforated support pillar structure. Each electrically conductive layer within the area of the laterally perforated support pillar structure extends through the lateral openings.

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