The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Dec. 24, 2019
Fundació Institut DE Ciències Fotòniques, Castelldefels, ES;
Institució Catalana DE Recerca I Estudis Avançats, Barcelona, ES;
Stijn Goossens, Castelldefels, ES;
Frank Koppens, Castelldefels, ES;
Gerasimos Konstantatos, Castelldefels, ES;
Carles Monasterio, Castelldefels, ES;
FUNDACIÓ, INSTITUT DE CIENCIES FOTÒNIQUES, Castelldefels, ES;
INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS, Barcelona, ES;
Abstract
The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vwith frequency fto modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency f, —a control unit (CU), and—a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency f; or—is configured to generate and apply a signal Vwith frequency fto a source (S) of the GFET continuously, simultaneously and with a delay tto induce a phase with respect to Vto yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.