The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Nov. 29, 2019
Applicants:

Beijing Boe Sensor Technology Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Cuiwei Tang, Beijing, CN;

Tienlun Ting, Beijing, CN;

Xue Cao, Beijing, CN;

Jie Wu, Beijing, CN;

Ying Wang, Beijing, CN;

Liang Li, Beijing, CN;

Haocheng Jia, Beijing, CN;

Chuncheng Che, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01P 1/18 (2006.01); H01P 11/00 (2006.01);
U.S. Cl.
CPC ...
H01P 1/184 (2013.01); H01P 1/181 (2013.01); H01P 11/003 (2013.01);
Abstract

A phase shifter, a manufacture method for manufacturing a phase shifter, a drive method for driving a phase shifter, and an electronic device are provided. The phase shifter includes a dielectric substrate, and a transmission line, a dielectric layer, an insulating layer, and a metal layer on the dielectric substrate. In a direction perpendicular to a first surface of the dielectric substrate, the dielectric layer and the insulating layer are between the metal layer and the transmission line, a material of the dielectric layer is a semiconductor material; and an orthographic projection of the metal layer on the dielectric substrate, an orthographic projection of the insulating layer on the dielectric substrate, and an orthographic projection of the dielectric layer on the dielectric substrate at least partially overlap. The present disclosure provides a new phase shifter based on a metal-insulator-semiconductor capacitor structure.


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