The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Feb. 25, 2020
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;

Inventors:

Kazushige Yamamoto, Yokohama Kanagawa, JP;

Soichiro Shibasaki, Nerima Tokyo, JP;

Mutsuki Yamazaki, Yokohama Kanagawa, JP;

Naoyuki Nakagawa, Setagaya Tokyo, JP;

Sara Yoshio, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/032 (2006.01); H01L 31/028 (2006.01); H01L 31/0272 (2006.01); H01L 33/34 (2010.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/0323 (2013.01); H01L 31/028 (2013.01); H01L 31/02725 (2013.01); H01L 33/343 (2013.01);
Abstract

A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode tonm tonm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.


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