The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Nov. 10, 2020
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, CN;
Jing Zhou, Shanghai, CN;
Zeshi Chu, Shanghai, CN;
Xu Dai, Shanghai, CN;
Yu Yu, Shanghai, CN;
Mengke Lan, Shanghai, CN;
Shangkun Guo, Shanghai, CN;
Jie Deng, Shanghai, CN;
Xiaoshuang Chen, Shanghai, CN;
Qingyuan Cai, Shanghai, CN;
Fangzhe Li, Shanghai, CN;
Zhaoyu Ji, Shanghai, CN;
Abstract
The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.