The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Feb. 18, 2021
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Weize Chen, Phoenix, AZ (US);
Mark Griswold, Gilbert, AZ (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/761 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7824 (2013.01); H01L 21/761 (2013.01); H01L 29/063 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01);
Abstract
In one embodiment, a transistor has a drift region that is formed to have a plurality of zones having different vertical doping profiles across the zones. At least one of the zones has a vertical doping profile that has a first peak near a top surface of the zone and a second peak near a bottom surface. An embodiment may have a lower doping in a region that is between the two peaks.