The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Aug. 10, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Tatsuo Harada, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a substrate, a drift layer provided on an upper surface side of the substrate, a base layer provided on the upper surface side of the drift layer, an upper semiconductor layer provided on the upper surface side of the base layer, a first electrode provided on the upper surface of the substrate, a second electrode provided on a rear surface of the substrate, a trench extending to the drift layer from the upper surface of the substrate and a gate electrode provided inside the trench, wherein an inner side surface of the trench has a first surface and a second surface provided below the first surface, the second surface tilts inward of the trench with respect to the first surface, and an intersection point of the first surface and the second surface is provided below the base layer.