The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Jul. 14, 2022
Applicant:

The Government of the United States As Represented BY the Director, National Security Agency, Ft. George G. Meade, MD (US);

Inventors:

Charles George Tahan, Kensington, MD (US);

Rousko Todorov Hristov, College Park, MD (US);

Yun-Pil Shim, Marriotsville, MD (US);

Hilary Hurst, Washington, DC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/165 (2006.01); G06N 10/00 (2022.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); G06N 10/00 (2019.01); H01L 21/26513 (2013.01); H01L 29/0665 (2013.01); H01L 29/165 (2013.01); H01L 29/42312 (2013.01);
Abstract

A method is disclosed, including positioning a lead wire of a gate chip at a distance of less than 10 nm from a semiconductor heterostructure. The heterostructure includes a surface layer and a subsurface layer. The method also includes inducing an electrostatic potential in the subsurface layer by applying a voltage to the lead wire. The method also includes loading a charge carrier into the subsurface layer. The method also includes detecting the charge carrier in the subsurface layer of the semiconductor heterostructure by emitting a radio-frequency pulse using a resonator coupled to the at least one lead wire of the gate chip, detecting a reflected pulse of the emitted radio-frequency pulse, and determining a phase shift of the reflected pulse relative to the emitted radio-frequency pulse. The method also includes characterizing the quantum dot by measuring valley splitting of the quantum dot.


Find Patent Forward Citations

Tahan, Charles. (2023). Method for induced quantum dots for material characterization, qubits, and quantum computers (U.S. Patent No. 11810968). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11810968

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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