The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Oct. 01, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Bongseok Suh, Seoul, KR;
Daewon Kim, Hwaseong-si, KR;
Beomjin Park, Hwaseong-si, KR;
Sukhyung Park, Seoul, KR;
Sungil Park, Suwon-si, KR;
Jaehoon Shin, Suwon-si, KR;
Bongseob Yang, Suwon-si, KR;
Junggun You, Ansan-si, KR;
Jaeyun Lee, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/772 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 29/1033 (2013.01); H01L 29/42376 (2013.01); H01L 29/66553 (2013.01); H01L 29/78696 (2013.01); H01L 21/28141 (2013.01); H01L 21/823468 (2013.01); H01L 29/1037 (2013.01); H01L 29/66719 (2013.01); H01L 29/7727 (2013.01);
Abstract
A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.