The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Jan. 26, 2021
Graphenea Semiconductor Slu, Donostia-San Sebastián, ES;
Torres Elías, Donostia-San Sebastián, ES;
Txoperena Oihana, Donostia-San Sebastián, ES;
Zurutuza Amaia, Donostia-San Sebastián, ES;
GRAPHENEA SEMICONDUCTOR SLU, Donostia-San Sebastián, ES;
Abstract
A sensor for performing measurements is disclosed. It comprises: a substrate; a plurality of graphene field-effect transistors (GFET) deposited on a central area of the substrate; at least one source electrode connected to the GFETs through at least one first metal track, wherein the at least one source electrode is disposed at the periphery of the substrate; at least one drain electrode connected to the GFETs through at least one second metal track, wherein the at least one drain electrode is disposed at the periphery of the substrate; and at least one gate electrode, disposed at least in part at the center of the substrate, wherein, in use of the sensor, when a sample is deposited in contact with the gate electrode and the GFETs, the sample allows gating between the gate electrode and the GFETs.