The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Jun. 09, 2020
Applicants:
Stmicroelectronics Application Gmbh, Aschheim-Dornach, DE;
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Mathieu Rouviere, Tours, FR;
Arnaud Yvon, Saint-Cyr sur Loire, FR;
Mohamed Saadna, Saint Cyr-sur-Loire, FR;
Vladimir Scarpa, Dusseldorf, DE;
Assignees:
STMICROELECTRONICS APPLICATION GMBH, Aschheim-Dornach, DE;
STMICROELECTRONICS (TOURS) SAS, Tours, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/8252 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/0254 (2013.01); H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 29/2003 (2013.01); H01L 29/40 (2013.01); H01L 29/66212 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01);
Abstract
A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.