The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
May. 20, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Chulyong Jang, Anyang-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/3171 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0214 (2013.01); H01L 2224/0215 (2013.01); H01L 2224/02125 (2013.01); H01L 2224/08059 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16237 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/3512 (2013.01);
Abstract
A semiconductor package includes a plurality of semiconductor chips. At least one of the semiconductor chips includes a semiconductor substrate including a semiconductor layer and a passivation layer having a third surface, a backside pad on the third surface, and a through-via penetrating through the semiconductor substrate. The backside pad includes an electrode pad portion, on the third surface, and a dam structure protruding on one side of the electrode pad portion and surrounding a side surface of the through-via. The dam structure is spaced apart from the side surface of the through-via.