The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Dec. 21, 2022
Applicant:

Hkc Corporation Limited, Shenzhen, CN;

Inventors:

Xiufeng Zhou, Shenzhen, CN;

Xin Yuan, Shenzhen, CN;

Haijiang Yuan, Shenzhen, CN;

Assignee:

HKC CORPORATION LIMITED, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3258 (2016.01); G09G 3/3291 (2016.01); H10K 102/00 (2023.01); H10K 50/80 (2023.01); G09G 3/3233 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3258 (2013.01); G09G 3/3291 (2013.01); G09G 3/3233 (2013.01); G09G 2300/0819 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/043 (2013.01); G09G 2320/045 (2013.01); H10K 50/80 (2023.02); H10K 2102/302 (2023.02);
Abstract

A pixel driving circuit includes a driving transistor, a voltage stabilizing transistor, and a storage capacitance. A gate metal layer of a gate electrode of the voltage stabilizing transistor that serves as the control terminal of the voltage stabilizing transistor, and an active layer are constituted as a channel on-state capacitance, a ratio of an area of the channel on-state capacitance to a capacitance value of the storage capacitance is less than a preset value the area of the channel on-state capacitance is a directly opposite overlapping area between the gate metal layer and the active layer. This preset value is determined based on a ratio of a voltage fluctuation at a control terminal of the driving transistor to a potential voltage. A correlation between the channel on-state capacitance and the storage capacitance of the voltage stabilizing transistor is determined, so that a new capacitance configuration method is provided.


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