The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Mar. 15, 2021
Applicant:

Institute of Physics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Xiufeng Han, Beijing, CN;

Yaowen Xing, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); H01F 10/32 (2006.01); H01F 10/193 (2006.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); G01R 33/00 (2006.01);
U.S. Cl.
CPC ...
G01R 33/093 (2013.01); G01R 33/095 (2013.01); H01F 10/193 (2013.01); H01F 10/325 (2013.01); H01F 10/3254 (2013.01); H10N 50/10 (2023.02); H10N 50/85 (2023.02); G01R 33/0052 (2013.01);
Abstract

The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.


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