The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Mar. 28, 2019
Centre National DE LA Recherche Scientifique, Paris, FR;
Sorbonne Universite, Paris, FR;
Ecole Normale Superieure DE Paris, Paris, FR;
Université Paris Cité, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
SORBONNE UNIVERSITE, Paris, FR;
ECOLE NORMALE SUPERIEURE DE PARIS, Paris, FR;
UNIVERSITÉ PARIS CITÉ, Paris, FR;
Abstract
A photoconductive switch for generating or detecting terahertz radiation (TR) is provided. The photoconductive switch may comprise at least a first and a second pair of electrodes (E, E, E) on a surface (SS) of a photoconductive substrate, wherein the electrodes of the first pair are separated by a first gap comprising at least a plurality of first rectilinear sections (G) extending along a first direction (x) and the electrodes of the second pairs are separated by a second gap comprising at least a plurality of second sections (G) extending along a second direction (y), different from the first direction. The photoconductive switch may further comprise a patterned opaque layer (PML) selectively masking portions of the gaps between the electrodes. Methods and devices for generating and detecting terahertz radiation comprising such photoconductive switches are also provided.