The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
May. 19, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H01L 29/51 (2006.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H01L 29/515 (2013.01); H01L 29/516 (2013.01); H10B 43/20 (2023.02); H10B 43/27 (2023.02); H10B 51/10 (2023.02); H10B 51/30 (2023.02);
Abstract
A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, a first dielectric layer surrounding a sidewall of the ferroelectric layer, and sacrificial patterns interposed between the first dielectric layer and the insulating layers and including a material with a higher dielectric constant than the first dielectric layer.