The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Jul. 12, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Euna Kim, Seoul, KR;

Keunnam Kim, Yongin-si, KR;

Kiseok Lee, Hwaseong-si, KR;

Wooyoung Choi, Seoul, KR;

Sunghee Han, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H01L 23/528 (2013.01); H10B 12/0335 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02);
Abstract

A semiconductor device includes a substrate including an active region, a first bitline structure and a second bitline structure that extend side by side on the substrate, a storage node contact electrically connected to the active region between the first and second bitline structures, a lower landing pad between the first and second bitline structures and on the storage node contact, an upper landing pad in contact with the first bitline structure and electrically connected to the lower landing pad, and a capping insulating layer. A lower surface of the upper landing pad in contact with the first bitline structure and a lower surface of the capping insulating layer in contact with the lower landing pad each include a portion in which a horizontal separation distance is increased from the adjacent upper landing pad in a direction toward the substrate.


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